Recovery of Alumina Nanocapacitors after High Voltage Breakdown

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

High Pressure Spark Gap Recovery after Overvolted Breakdown

A spark gap at pressures from 100 kPa to 7 MPa with various gases is fired by overvolting the electodes. The recovery of the gap is studied using a second identical pulse to test the voltage holdoff during the recovery period. A TV camera, interferometer and a spinning mirror camera are also used to record arc locations and density profiles. The gas is stationary during the recovery. Breakdown ...

Breakdown behaviour of high-voltage GaN-HEMTs

degradation of oil impregnated paper insulation under influence of repetitive fast high voltage impulses

در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...

Development of High Breakdown Voltage InGaP/GaAs DHBTs

In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low n doping. The process challenges and considerati...